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Crystal growth and electronic material manufacturing have extremely strict requirements on environmental cleanliness. Even tiny volatile impurities will cause crystal defects and device performance degradation. High-purity graphite thermal field is specially developed for these high-standard processes, and it is widely adopted in photovoltaic and semiconductor production lines. Jiecheng Graphite manufactures high-purity graphite thermal field assemblies with strict ash control for high-value thermal processing.
Core Product Features
Ultra-low ash graphite raw material is selected to minimize volatile precipitation under high vacuum, which greatly reduces particle contamination on wafers and crystals. The integrated heat reflection and insulation design delivers stable and even temperature gradients, a key prerequisite for defect-free crystal growth. High density and compact graphite structure slow down oxidation and ablation, extending the service cycle of the whole thermal field system. All matching graphite parts maintain consistent material performance, avoiding local overheating and premature damage. We can configure anti-oxidation impregnation treatment for exposed components to adapt to different working cycles.
Main Application Scenarios
- Czochralski monocrystalline silicon furnace thermal field for solar cells
- SiC single crystal growth furnace and semiconductor annealing equipment
- Sapphire crystal growth and optical crystal high-temperature processing
- High-performance ceramic target and electronic functional material sintering
- PECVD, CVD and other thin film deposition thermal systems
For processes with zero tolerance to carbon and ash pollution, high-purity graphite thermal field is the preferred solution. Jiecheng Graphite supports customized thermal field layout drawing, precision machining of all spare parts and dimension inspection before shipment.
